Mohlo by sa vám tiež páčiť

Viac informácií o knihe Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 1025 bodov

Anotácia knihy

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

Parametre knihy

Zaradenie knihy Books in English Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Celý názov: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
• Autor: P. Pichler
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 554
• EAN: 9783211206874
• ISBN: 3211206876
• ID: 01463990
• Nakladateľ: Springer Verlag GmbH
• Hmotnosť: 1200 g
• Rozmery: 254 × 178 × 27 mm
• Dátum vydania: 02. June 2004

Obľúbené z iného súdka

---

---

---