Zobacz książki o podobnej tematyce

Więcej informacji o Ion Implantation and Synthesis of Materials

• Dane szczegółowe
• Opis
• Ulubione w innej kategorii

Za ten zakup dostaniesz 304 punkty

Opis

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Szczegóły książki

Kategoria Książki po angielsku Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Pełny tytuł: Ion Implantation and Synthesis of Materials
• Autor: Michael Nastasi, James W. Mayer
• Język: Angielski
• Oprawa: Miękka
• Liczba stron: 263
• EAN: 9783642062599
• ISBN: 3642062598
• ID: 01651532
• Wydawca: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
• Waga: 433 g
• Wymiary: 235 × 155 × 16 mm
• Data wydania: 12. February 2010

---

---

---