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Viac informácií o knihe Novel Structural Polycrystalline Silicon Thin Film Transistor

• Parametre knihy
• Anotácia kniha
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Anotácia knihy

This thesis is mainly surveyed the characteristics of polycrystalline silicon thin film transistor (TFT) putting forward and probing into four kinds of novel buried-oxide structures. With these structures, we can improve the shortcoming of the traditional polycrystalline silicon TFT, like leakage current (On/Off state current), subthreshold swing, floating body effect (kink effect), self-heating effect, and short channel effect etc.. Novel buried-oxide polysilicon thin-film transistors (poly-Si TFTs) are proposed and demonstrated to be superior to their conventional counterparts. Furthermore, these novel structures are simple to fabricate, practical, and completely compatible on CMOS technology. Otherwise, the poly-Si TFT with/without NH3 annealing and body implantation, and their corresponding effects, have also been investigated and discussed in depth.

Parametre knihy

• Celý názov: Novel Structural Polycrystalline Silicon Thin Film Transistor
• Podnázov: Fabrication and Characterization of Polycrystalline Silicon Thin Film Transistor with Buried Insulator
• Autor: Kuo-Dong Huang
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 192
• EAN: 9783639129878
• ID: 06821735
• Nakladateľ: VDM Verlag Dr. Müller
• Rozmery: 220 × 150 × 12 mm
• Rok vydania: 2011

Obľúbené z iného súdka

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