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Viac informácií o knihe Analysis and Simulation of Heterostructure Devices

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• Anotácia kniha
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Anotácia knihy

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Analysis and Simulation of Heterostructure Devices
• Autor: V. Palankovski, Rüdiger Quay
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 289
• EAN: 9783211405376
• ISBN: 3211405372
• ID: 01464168
• Nakladateľ: Springer Verlag GmbH
• Hmotnosť: 1390 g
• Rozmery: 235 × 155 × 22 mm
• Dátum vydania: 18. December 2003

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