Computer-Aided Design and VLSI Device Development / Najlacnejšie knihy
Computer-Aided Design and VLSI Device Development

Kód: 02174570

Computer-Aided Design and VLSI Device Development

Autor it Man Cham, oo-Young Oh, John L. Moll, eunmyung Lee

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception o ... celý popis

214.07


Skladom u dodávateľa v malom množstve
Odosielame za 12 - 15 dní

Potrebujete viac kusov?Ak máte záujem o viac kusov, preverte, prosím, najprv dostupnosť titulu na našej zákazníckej podpore.


Pridať medzi želanie

Mohlo by sa vám tiež páčiť

Darujte túto knihu ešte dnes
  1. Objednajte knihu a vyberte Zaslať ako darček.
  2. Obratom obdržíte darovací poukaz na knihu, ktorý môžete ihneď odovzdať obdarovanému.
  3. Knihu zašleme na adresu obdarovaného, o nič sa nestaráte.

Viac informácií

Viac informácií o knihe Computer-Aided Design and VLSI Device Development

Nákupom získate 530 bodov

Anotácia knihy

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Energy technology & engineering Electrical engineering

214.07

Obľúbené z iného súdka



Osobný odber Bratislava a 2642 dalších

Copyright ©2008-24 najlacnejsie-knihy.sk Všetky práva vyhradenéSúkromieCookies


Môj účet: Prihlásiť sa
Všetky knihy sveta na jednom mieste. Navyše za skvelé ceny.

Nákupný košík ( prázdny )

Vyzdvihnutie v Zásielkovni
zadarmo nad 59,99 €.

Nachádzate sa: