Kód: 06976695
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of th ... celý popis
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102.86 €
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Anotácia knihy
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Parametre knihy
Zaradenie knihy Knihy po anglicky Computing & information technology Computer science Systems analysis & design
102.86 €
Angličtina
Osobný odber Bratislava a 12820 dalších
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