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Viac informácií o knihe Hierarchical Device Simulation

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Anotácia knihy

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Hierarchical Device Simulation
• Podnázov: The Monte-Carlo Perspective
• Autor: C. Jungemann, B. Meinzerhagen
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 261
• EAN: 9783211013618
• ISBN: 321101361X
• ID: 01463962
• Nakladateľ: Springer, Wien
• Hmotnosť: 636 g
• Rozmery: 234 × 156 × 17 mm
• Rok vydania: 2003

Obľúbené z iného súdka

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