Neutron-Transmutation-Doped Silicon / Najlacnejšie knihy
Neutron-Transmutation-Doped Silicon

Kód: 05257672

Neutron-Transmutation-Doped Silicon

Autor Jens Guldberg

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping ... celý popis

139.43


Skladom u dodávateľa v malom množstve
Odosielame za 12 - 17 dní

Potrebujete viac kusov?Ak máte záujem o viac kusov, preverte, prosím, najprv dostupnosť titulu na našej zákazníckej podpore.


Pridať medzi želanie

Mohlo by sa vám tiež páčiť

Darčekový poukaz: Radosť zaručená
  1. Darujte poukaz v ľubovoľnej hodnote, a my sa postaráme o zvyšok.
  2. Poukaz sa vzťahuje na všetky produkty v našej ponuke.
  3. Elektronický poukaz si vytlačíte z e-mailu a môžete ho ihneď darovať.
  4. Platnosť poukazu je 12 mesiacov od dátumu vystavenia.

Objednať darčekový poukazViac informácií

Viac informácií o knihe Neutron-Transmutation-Doped Silicon

Nákupom získate 345 bodov

Anotácia knihy

This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Energy technology & engineering Electrical engineering

139.43

Obľúbené z iného súdka



Osobný odber Bratislava a 2642 dalších

Copyright ©2008-24 najlacnejsie-knihy.sk Všetky práva vyhradenéSúkromieCookies


Môj účet: Prihlásiť sa
Všetky knihy sveta na jednom mieste. Navyše za skvelé ceny.

Nákupný košík ( prázdny )

Vyzdvihnutie v Zásielkovni
zadarmo nad 59,99 €.

Nachádzate sa: