Mohlo by sa vám tiež páčiť

Viac informácií o knihe Towards the First Silicon Laser

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 345 bodov

Anotácia knihy

Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Other technologies & applied sciences Applied optics

• Celý názov: Towards the First Silicon Laser
• Autor: Lorenzo Pavesi
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 482
• EAN: 9781402011948
• ISBN: 1402011946
• ID: 04194627
• Nakladateľ: Springer-Verlag New York Inc.
• Hmotnosť: 1530 g
• Rozmery: 240 × 160 × 27 mm
• Dátum vydania: 31. March 2003

Obľúbené z iného súdka

---

---

---