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Viac informácií o knihe AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 130 bodov

Anotácia knihy

This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Parametre knihy

• Celý názov: AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications
• Autor: Jutta Kühn
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 259
• EAN: 9783866446151
• ID: 01877569
• Nakladateľ: KIT Scientific Publishing
• Hmotnosť: 430 g
• Rozmery: 210 × 148 × 12 mm
• Rok vydania: 2011

Obľúbené z iného súdka

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