Mohlo by sa vám tiež páčiť

Viac informácií o knihe Antimonide-Based Composite-Channel HFETs

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 118 bodov

Anotácia knihy

The binary compound semiconductors, InSb and InAs,along with their related alloys with similar latticeconstants are candidates for high-speed, low-powerelectronic devices. Applications could include high-speed analog and digital systems used for dataprocessing, communications, imaging, and sensing,particularly in portable equipment such as hand-helddevices and satellites. The development of Sb-basedtransistors for use in low-noise high-frequencyamplifiers, digital circuits, and mixed-signalcircuits could provide the enabling technologyneeded to address these rapidly expanding needs.However, a drawback of the technology is the lowbreakdown voltage associated with the relativelynarrow band-gap InAs channel. Added with staggeredband lineup at InAs/AlSb heterojunction, thegenerated holes from the breakdown cannot beconfined in the channel and result in significanteffects on device performance. In this work, wepropose an alternative approach of composite channelto alleviate this issue. Device design, growth,fabrication and characterization will be describedin details.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Technology: general issues

• Celý názov: Antimonide-Based Composite-Channel HFETs
• Autor: Heng-Kuang Lin
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 100
• EAN: 9783639090642
• ISBN: 3639090640
• ID: 06818168
• Nakladateľ: VDM Verlag Dr. Mueller E.K.
• Hmotnosť: 145 g
• Rozmery: 229 × 152 × 5 mm
• Dátum vydania: 06. October 2008

Obľúbené z iného súdka

---

---

---