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Viac informácií o knihe GaN Transistor Modeling for RF and Power Electronics

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 510 bodov

Anotácia knihy

The aim of GaN Transistor Modeling for RF and Power Electronics is to cover all aspects of characterization and modelling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects including trapping, self-heating, field plate effects etc to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as Power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology especially for circuit designers, materials science and device engineers as well as academic researchers and students. Provides an overview of the operation and physics of GaN-based transistors Describes indepth all aspects of the ASM-HEMT model for GaN circuits, which is an industry standard model, by the developers of the model Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Celý názov: GaN Transistor Modeling for RF and Power Electronics
• Podnázov: Using The ASM-HEMT Model
• Autor: Yogesh Chauhan, Sheikh Ahsan, Ahtisham Pampori, Raghvendra Dangi
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 425
• EAN: 9780323998710
• ID: 39252068
• Nakladateľ: WOODHEAD PUB
• Rozmery: 229 × 152 mm
• Dátum vydania: 01. August 2023

Obľúbené z iného súdka

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