Kód: 06829939
Gate leakage variability in nano-scale CMOS devices is investigated through advanced modelling and simulations of planar, bulk-type MOSFETs. The motivation for the work stems from the two of the most challenging issues in front of ... celý popis
Nákupom získate 189 bodov
Gate leakage variability in nano-scale CMOS devices is investigated through advanced modelling and simulations of planar, bulk-type MOSFETs. The motivation for the work stems from the two of the most challenging issues in front of the semiconductor industry - excessive leakage power, and device variability - both being brought about with the aggressive downscaling of device dimensions to the nanometer scale. The aim is to deliver a comprehensive tool and understanding for the assessment of gate leakage variability in realistic nano-scale CMOS transistors. The book describes a 3D modelling and simulation framework for the study of device variability, and presents a case study of gate leakage variability in a 25 nm square gate n-type MOSFET, taking into account the combined effect of random dopant fluctuations and oxide thickness fluctuations. An important chapter is dedicated to the analysis of the non-abrupt band-gap and permittivity transition at the Si/SiO2 interface, and reveals a strong impact on subband quantisation, and enhancement of capacitance and leakage, relative to simulations with an abrupt band-edge transition at the interface.
Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering
75.87 €
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