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Viac informácií o knihe Metal Oxide Semiconductor Physics and Technology

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

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Anotácia knihy

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Metal Oxide Semiconductor Physics and Technology
• Autor: J.R. Brews, E.H. Nicollian
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 928
• EAN: 9780471430797
• ISBN: 047143079X
• ID: 04890864
• Nakladateľ: John Wiley & Sons Inc
• Hmotnosť: 1338 g
• Rozmery: 238 × 414 × 57 mm
• Dátum vydania: 13. December 2002

Obľúbené z iného súdka

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