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Viac informácií o knihe MOSFET Models for VLSI Circuit Simulation

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

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Anotácia knihy

The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.

Parametre knihy

Zaradenie knihy Knihy po anglicky Mathematics & science Mathematics Calculus & mathematical analysis

• Celý názov: MOSFET Models for VLSI Circuit Simulation
• Podnázov: Theory and Practice
• Autor: Narain D. Arora
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 605
• EAN: 9783709192498
• ISBN: 3709192498
• ID: 02119156
• Nakladateľ: Springer Verlag GmbH
• Hmotnosť: 1074 g
• Rozmery: 244 × 170 × 34 mm
• Dátum vydania: 22. January 2012

Obľúbené z iného súdka

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