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Viac informácií o knihe Rapid Thermal Processing for Future Semiconductor Devices

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Anotácia knihy

This volume is a collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. This symposium is second conference followed the previous successful first International RTP conference held at Hokkaido in 1997. The RTP 2001 covered the latest developments in RTP and other short-time processing continuously aiming to point out the future direction in the Silicon ULSI devices and II-VI, III-V compound semiconductor devices. This book covers the following areas such as: advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe, hetero-structure, novel metallization, inter-connect, silicidation, low-k materials, thin dielectrics including gate dielectrics and high-k materials, thin film deposition including SiGe, SOI and SiC, process and device modelling, Laser-assisted crystallization and TFT device fabrication technologies, temperature monitoring and slip-free technologies.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Rapid Thermal Processing for Future Semiconductor Devices
• Autor: Fukuda
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 160
• EAN: 9780444513397
• ISBN: 0444513396
• ID: 04079629
• Nakladateľ: Elsevier Books
• Hmotnosť: 310 g
• Rozmery: 243 × 172 × 17 mm
• Dátum vydania: 02. April 2003

Obľúbené z iného súdka

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