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Viac informácií o knihe GaN and Related Alloys - 2000: Volume 639

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

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Anotácia knihy

This year's nitride proceedings provides an integrated view of advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. The devices discussed include high-frequency, high-power, and high-temperature devices as well as light-emitting diodes, laser diodes, and UV photodetectors. Challenges and goals for the advancement of this field include the further optimization and stabilization of growth processes, and growth of GaInN, AlGaN, AlInN, and quaternary layers. The book captures the most exciting developments of this field, and should prove useful for both researchers and students of this novel science and technology. Topics include: advances in growth; advanced alloys and characterization; growth and characterization; dopants and processing; lateral epitaxy and growth; optical properties and light emitters; electronic transport and quantum dots; characterization and bandstructure; quantum dots and photo detectors; electronic properties and transport; light emitters and strain control and light emitters and electronic devices.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Mechanical engineering & materials Materials science

• Celý názov: GaN and Related Alloys - 2000: Volume 639
• Autor: Christian WetzelMichael S. ShurUmesh K. MishraBernard Gil
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 967
• EAN: 9781558995499
• ISBN: 1558995498
• ID: 02060273
• Nakladateľ: Materials Research Society
• Hmotnosť: 1500 g
• Rozmery: 234 × 163 × 56 mm
• Dátum vydania: 04. September 2001

Obľúbené z iného súdka

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