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Viac informácií o knihe Semiconductor Process and Device Performance Modelling: Volume 490

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

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Anotácia knihy

The concept of a 'virtual semiconductor fab' requires a focused effort among engineering, physics, chemistry, materials, mathematical and computational sciences. Although widely used by the semiconductor industry, current technology computer-aided design (TCAD) struggles to keep pace with new generations of IC technology. The semiconductor industry needs improved, predictive physically-based modelling and simulation capabilities to decrease cost, improve efficiency, and provide TCAD tools to process developers before production begins. Without the use of more advanced next generation TCAD models, future IC technology development will slow as a result of expensive, time-consuming experimental validation of processes and device performance. This book brings together researchers from industry, universities and national laboratories to highlight recent advances in TCAD, and to identify critical areas for future emphasis. Both silicon and compound semiconductor process and device performance modelling are featured. Topics include: bulk process modelling; equipment modelling; topography modelling; and characterization and device modelling.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Semiconductor Process and Device Performance Modelling: Volume 490
• Autor: Scott T. DunhamJeffrey S. Nelson
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 273
• EAN: 9781558993952
• ISBN: 1558993959
• ID: 02060144
• Nakladateľ: Materials Research Society
• Hmotnosť: 568 g
• Rozmery: 234 × 155 × 20 mm
• Dátum vydania: 02. October 1998

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