Mohlo by sa vám tiež páčiť

Viac informácií o knihe Theoretical Study of Electrical Properties of n-type GaN

• Parametre knihy
• Anotácia kniha
• Obľúbené z iného súdka

Nákupom získate 116 bodov

Anotácia knihy

In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.

Parametre knihy

• Celý názov: Theoretical Study of Electrical Properties of n-type GaN
• Podnázov: Transport in Nanostructure
• Autor: Arindam Biswas, Sandip Haldar, Debasish Sarkar
• Jazyk: Angličtina
• Väzba: Brožovaná
• Počet strán: 76
• EAN: 9786139834945
• ID: 19747331
• Nakladateľ: Lambert Academic Publishing
• Hmotnosť: 122 g
• Rozmery: 229 × 152 × 5 mm
• Dátum vydania: 24. May 2018

Obľúbené z iného súdka

---

---

---