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Viac informácií o knihe Nitride Semiconductors: Volume 482

• Parametre knihy
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Nákupom získate 88 bodov

Anotácia knihy

This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Parametre knihy

Zaradenie knihy Knihy po anglicky Technology, engineering, agriculture Electronics & communications engineering Electronics engineering

• Celý názov: Nitride Semiconductors: Volume 482
• Autor: F. A. PonceS. P. DenBaarsB. K. MeyerS. Nakamura
• Jazyk: Angličtina
• Väzba: Pevná
• Počet strán: 1224
• EAN: 9781558993877
• ISBN: 1558993878
• ID: 02060136
• Nakladateľ: Materials Research Society
• Hmotnosť: 1818 g
• Rozmery: 234 × 165 × 69 mm
• Dátum vydania: 20. April 1998

Obľúbené z iného súdka

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